Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

Gate Stability of GaN-Based HEMTs with P-Type Gate

This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress ex...

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

Article history: Received 30 June 2015 Received in revised form 20 November 2015 Accepted 30 November 2015 Available online 7 December 2015 This paper reports an analysis of the degradation mechanisms of GaN-based normally-off transistors submitted to off-state stress, forward-gate operation and electrostatic discharges. The analysiswas carried out on transistors with p-type gate, rated for 600...

AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 mm gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 mA/mm in pinch-off. Unity gain cutoff frequencies, ft and fmax, ...

Thermal Behavior Investigation of Cascode GaN HEMTs

This paper presents the evaluation of heat generation behavior and related thermal measurement analysis of packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) cascaded with low-voltage MOSFET and SiC SBD. Since thermal management is extremely important for high power packaging, a hybrid integration of the GaN HEMTs onto a DBC substrate and metal case is proposed. We investi...

Thermal Stability of AlGaN/GaN HEMTs Using High Work Function Pd-gate, Ir-gate, Ni-gate Designs